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| Part Number | TP5335K1-G |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 350V |
| Current - Continuous Drain (Id) @ 25°C | 85mA (Tj) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 30 Ohm @ 200mA, 10V |
| Operating Temperature | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: Microchip Technology
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