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| Numéro d'article | STB11NM60FDT4 |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 600V |
| Courant - Drain continu (Id) @ 25 ° C | 11A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 40nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 900pF @ 25V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 160W (Tc) |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
| Température de fonctionnement | - |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | D2PAK |
| Paquet / cas | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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