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| Numéro d'article | PHN210,118 |
|---|---|
| État de la pièce | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | - |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 6nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 250pF @ 20V |
| Puissance - Max | 2W |
| Température de fonctionnement | -65°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-SOIC (0.154", 3.90mm Width) |
| Package de périphérique fournisseur | 8-SO |
Fabricant: Nexperia USA Inc.
La description: MOSFET 2N-CH 30V 6.3A SOT96-1
En stock: 0
Fabricant: Nexperia USA Inc.
La description: MOSFET 2N-CH 30V 8SOIC
En stock: 2500
