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| Artikelnummer | PHN210,118 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | 2 N-Channel (Dual) |
| FET-Eigenschaft | Logic Level Gate |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | - |
| Rds Ein (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 6nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 250pF @ 20V |
| Leistung max | 2W |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
| Lieferantengerätepaket | 8-SO |
Hersteller: Nexperia USA Inc.
Beschreibung: MOSFET 2N-CH 30V 6.3A SOT96-1
Auf Lager: 0
Hersteller: Nexperia USA Inc.
Beschreibung: MOSFET 2N-CH 30V 8SOIC
Auf Lager: 2500
