transphorm is a global semiconductor company that develops gallium nitride (gan) fets for high-voltage power conversion applications.
| Part Number | TPH3207WS |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 8V |
| Vgs(th) (Max) @ Id | 2.65V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2197pF @ 400V |
| Vgs (Max) | ±18V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 32A, 8V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
