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| Numero di parte | FDMQ8403 |
|---|---|
| Stato parte | Active |
| Tipo FET | 4 N-Channel (H-Bridge) |
| Caratteristica FET | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Corrente - Scarico continuo (Id) @ 25 ° C | 3.1A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Capacità di ingresso (Ciss) (Max) @ Vds | 215pF @ 15V |
| Potenza - Max | 1.9W |
| temperatura di esercizio | -55°C ~ 150°C (TJ) |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | 12-WDFN Exposed Pad |
| Pacchetto dispositivo fornitore | 12-MLP (5x4.5) |
