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| Artikelnummer | FDMQ8403 |
|---|---|
| Teilstatus | Active |
| FET Typ | 4 N-Channel (H-Bridge) |
| FET-Eigenschaft | Standard |
| Drain auf Source-Spannung (Vdss) | 100V |
| Strom - Dauerablass (Id) @ 25 ° C | 3.1A |
| Rds Ein (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 5nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 215pF @ 15V |
| Leistung max | 1.9W |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 12-WDFN Exposed Pad |
| Lieferantengerätepaket | 12-MLP (5x4.5) |
