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| Numéro d'article | TPH5200FNH,L1Q |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 250V |
| Courant - Drain continu (Id) @ 25 ° C | 26A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 22nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2200pF @ 100V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 78W (Tc) |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 13A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 8-SOP Advance (5x5) |
| Paquet / cas | 8-PowerVDFN |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 250V 26A SOP8
En stock: 0
