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Artikelnummer | TPH5200FNH,L1Q |
---|---|
Teilstatus | Active |
FET Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain auf Source-Spannung (Vdss) | 250V |
Strom - Dauerablass (Id) @ 25 ° C | 26A (Tc) |
Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gate Ladung (Qg) (Max) @ Vgs | 22nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 2200pF @ 100V |
Vgs (Max) | ±20V |
FET-Eigenschaft | - |
Verlustleistung (Max) | 78W (Tc) |
Rds Ein (Max) @ Id, Vgs | 52 mOhm @ 13A, 10V |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Lieferantengerätepaket | 8-SOP Advance (5x5) |
Paket / Fall | 8-PowerVDFN |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 250V 26A SOP8
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