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| Numéro d'article | DMT10H010LPS-13 |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 100V |
| Courant - Drain continu (Id) @ 25 ° C | 9.4A (Ta), 98A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 71nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 3000pF @ 50V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 1.2W (Ta), 139W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 13A, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | PowerDI5060-8 |
| Paquet / cas | 8-PowerTDFN |
Fabricant: Diodes Incorporated
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