Part Number | ES6U1T2R |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
Vgs (Max) | ±10V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WEMT |
Package / Case | SOT-563, SOT-666 |