rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numéro d'article | ES6U1T2R |
|---|---|
| État de la pièce | Active |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 12V |
| Courant - Drain continu (Id) @ 25 ° C | 1.3A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 290pF @ 6V |
| Vgs (Max) | ±10V |
| FET Caractéristique | Schottky Diode (Isolated) |
| Dissipation de puissance (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 6-WEMT |
| Paquet / cas | SOT-563, SOT-666 |
