Part Number | EMD30T2R |
---|---|
Part Status | Not For New Designs |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA, 200mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 30V |
Resistor - Base (R1) (Ohms) | 10k, 1k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 260MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Manufacturer: ON Semiconductor
Description: TRANS PREBIAS NPN/PNP SOT563
In Stock: 60000
Manufacturer: ON Semiconductor
Description: TRANS PREBIAS NPN/PNP SOT563
In Stock: 120000