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| Artikelnummer | STH12N120K5-2 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 1200V |
| Strom - Dauerablass (Id) @ 25 ° C | 12A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 100µA |
| Gate Ladung (Qg) (Max) @ Vgs | 44.2nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1370pF @ 100V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 250W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 690 mOhm @ 6A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | H2Pak-2 |
| Paket / Fall | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 1200V 12A H2PAK-2
Auf Lager: 0
