epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Artikelnummer | EPC2101ENG |
|---|---|
| Teilstatus | Discontinued at Digi-Key |
| FET Typ | 2 N-Channel (Half Bridge) |
| FET-Eigenschaft | GaNFET (Gallium Nitride) |
| Drain auf Source-Spannung (Vdss) | 60V |
| Strom - Dauerablass (Id) @ 25 ° C | 9.5A, 38A |
| Rds Ein (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
| Vgs (th) (Max) @ Id | 2.5V @ 2mA |
| Gate Ladung (Qg) (Max) @ Vgs | 2.7nC @ 5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 300pF @ 30V |
| Leistung max | - |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | Die |
| Lieferantengerätepaket | Die |
