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| Artikelnummer | PHK28NQ03LT,518 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 23.7A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 30.3nC @ 4.5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 2800pF @ 20V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 6.25W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 6.5 mOhm @ 14A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | 8-SO |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
Hersteller: NXP USA Inc.
Beschreibung: MOSFET N-CH 30V 23.7A 8SOIC
Auf Lager: 0
