Part Number | FQA11N90 |
---|---|
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 94nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 960 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Manufacturer: Fairchild/ON Semiconductor
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