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| Numero di parte | MT3S20P(TE12L,F) |
|---|---|
| Stato parte | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequenza - Transizione | 7GHz |
| Figura del rumore (dB Typ @ f) | 1.45dB @ 1GHz |
| Guadagno | 16.5dB |
| Potenza - Max | 1.8W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Corrente - Collector (Ic) (Max) | 80mA |
| temperatura di esercizio | 150°C (TJ) |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | TO-243AA |
| Pacchetto dispositivo fornitore | PW-MINI |
fabbricante: Toshiba Semiconductor and Storage
Descrizione: TRANS RF NPN 12V 1GHZ PW-MINI
Disponibile: 1000
fabbricante: Toshiba Semiconductor and Storage
Descrizione: TRANS RF NPN 7GHZ 80MA UFM
Disponibile: 0
