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| Numéro d'article | TPC8018-H(TE12LQM) |
|---|---|
| État de la pièce | Obsolete |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 18A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 38nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2265pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 9A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 8-SOP (5.5x6.0) |
| Paquet / cas | 8-SOIC (0.173", 4.40mm Width) |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 200V 1.8A 8-SOP
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 11A SOP8 2-6J1B
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 18A SOP8 2-6J1B
En stock: 0
