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| Numéro d'article | TK20C60W,S1VQ |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 600V |
| Courant - Drain continu (Id) @ 25 ° C | 20A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 3.7V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 48nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1680pF @ 300V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 165W (Tc) |
| Rds On (Max) @ Id, Vgs | 155 mOhm @ 10A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | I2PAK |
| Paquet / cas | TO-262-3 Long Leads, I²Pak, TO-262AA |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 20A I2PAK
En stock: 38
