toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Part Number | TK20C60W,S1VQ |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A I2PAK
In Stock: 38