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| Numéro d'article | SSM3J56ACT,L3F |
|---|---|
| État de la pièce | Active |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 20V |
| Courant - Drain continu (Id) @ 25 ° C | 1.4A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 1.6nC @ 4.5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 100pF @ 10V |
| Vgs (Max) | ±8V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 800mA, 4.5V |
| Température de fonctionnement | 150°C |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | CST3 |
| Paquet / cas | SC-101, SOT-883 |
Fabricant: Toshiba Semiconductor and Storage
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Fabricant: Toshiba Semiconductor and Storage
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En stock: 0
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La description: MOSFET P-CH 20V 4.4A UFM
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La description: X34 PB-F SMALL LOW ON RESISTANCE
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La description: MOSFET P-CH 20V 5.5A
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