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Numéro d'article | SSM3J133TU,LF |
---|---|
État de la pièce | Active |
FET Type | P-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 20V |
Courant - Drain continu (Id) @ 25 ° C | 5.5A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 1mA |
Charge de porte (Qg) (Max) @ Vgs | 12.8nC @ 4.5V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 840pF @ 10V |
Vgs (Max) | ±8V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 29.8 mOhm @ 3A, 4.5V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Surface Mount |
Package de périphérique fournisseur | UFM |
Paquet / cas | 3-SMD, Flat Leads |
Fabricant: Toshiba Semiconductor and Storage
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