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| Numéro d'article | FDI3652 |
|---|---|
| État de la pièce | Obsolete |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 100V |
| Courant - Drain continu (Id) @ 25 ° C | 9A (Ta), 61A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 53nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2880pF @ 25V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 61A, 10V |
| Température de fonctionnement | -55°C ~ 175°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-262AA |
| Paquet / cas | TO-262-3 Long Leads, I²Pak, TO-262AA |
Fabricant: Fairchild/ON Semiconductor
La description: MOSFET N-CH 60V 80A TO-262AB
En stock: 780
Fabricant: Fairchild/ON Semiconductor
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