Accueil Indice de produit Produits à semiconducteurs discrets Transistors - FET, MOSFET - Matrices ALD111933PAL

Advanced Linear Devices Inc. ALD111933PAL

Numéro d'article
ALD111933PAL
Fabricant
Advanced Linear Devices Inc.
La description
MOSFET 2N-CH 10.6V 8DIP
Statut sans plomb / statut RoHS
Lead free / RoHS Compliant
Famille
Transistors - FET, MOSFET - Matrices
Advanced Linear Devices, Inc.

Advanced Linear Devices, Inc.

ald offers ultra-low-power, precision cmos analog integrated circuits, related board level products and energy harvesting modules and accessories.

En Stock $ Quantité pcs
  • Prix ​​de référence

    (En dollars américains)
  • 1 pcs

    1.51000/pcs
  • 10 pcs

    1.43100/pcs
  • 100 pcs

    1.14990/pcs
  • 500 pcs

    0.89436/pcs
  • 1,000 pcs

    0.74103/pcs
Total:1.51000/pcs Unit Price:
1.51000/pcs
Prix ​​cible:
Quantité:
Paramètre du produit
Numéro d'article ALD111933PAL
État de la pièce Active
FET Type 2 N-Channel (Dual) Matched Pair
FET Caractéristique Standard
Drain à la tension de source (Vdss) 10.6V
Courant - Drain continu (Id) @ 25 ° C -
Rds On (Max) @ Id, Vgs 500 Ohm @ 5.9V
Vgs (th) (Max) @ Id 3.35V @ 1µA
Charge de porte (Qg) (Max) @ Vgs -
Capacitance d'entrée (Ciss) (Max) @ Vds 2.5pF @ 5V
Puissance - Max 500mW
Température de fonctionnement 0°C ~ 70°C (TJ)
Type de montage Through Hole
Paquet / cas 8-DIP (0.300", 7.62mm)
Package de périphérique fournisseur 8-PDIP
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