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| Numero de parte | MMDF2C03HDR2 |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | N and P-Channel |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 4.1A, 3A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 16nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 630pF @ 24V |
| Potencia - Max | 2W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SOIC |
Fabricante: ON Semiconductor
Descripción: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
En stock: 0
