diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numero de parte | HTMN5130SSD-13 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 55V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 2.6A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 8.9nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 218.7pF @ 25V |
| Potencia - Max | 1.7W |
| Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SO |
Fabricante: Diodes Incorporated
Descripción: MOSFET 2N-CH 55V 2.6A 8SOIC
En stock: 0
