diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Artikelnummer | HTMN5130SSD-13 |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 N-Channel (Dual) |
| FET-Eigenschaft | Standard |
| Drain auf Source-Spannung (Vdss) | 55V |
| Strom - Dauerablass (Id) @ 25 ° C | 2.6A |
| Rds Ein (Max) @ Id, Vgs | 130 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 8.9nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 218.7pF @ 25V |
| Leistung max | 1.7W |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
| Lieferantengerätepaket | 8-SO |
Hersteller: Diodes Incorporated
Beschreibung: MOSFET 2N-CH 55V 2.6A 8SOIC
Auf Lager: 0
