Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN1969FE(TE85L,F)

Toshiba Semiconductor and Storage RN1969FE(TE85L,F)

Part Number
RN1969FE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 3542 pcs
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Product Parameter
Part Number RN1969FE(TE85L,F)
Part Status Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
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RN1969FE(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.1W ES6

In Stock: 0

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