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| Part Number | STW56N65M2-4 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 100V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 358W (Tc) |
| Rds On (Max) @ Id, Vgs | 62 mOhm @ 24.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
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