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| Artikelnummer | SSM6L13TU(T5L,F,T) |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N and P-Channel |
| FET-Eigenschaft | Logic Level Gate, 1.8V Drive |
| Drain auf Source-Spannung (Vdss) | 20V |
| Strom - Dauerablass (Id) @ 25 ° C | 800mA (Ta) |
| Rds Ein (Max) @ Id, Vgs | 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V |
| Vgs (th) (Max) @ Id | 1V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 268pF @ 10V, 250pF @ 10V |
| Leistung max | 500mW |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 6-SMD, Flat Leads |
| Lieferantengerätepaket | UF6 |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N/P-CH 20V 0.5A UF6 S
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET ARRAY N/P-CH 20V UF6
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Auf Lager: 0
