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| Artikelnummer | NTD4979N-35G |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 9.4A (Ta), 41A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 16.5nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 837pF @ 15V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 1.38W (Ta), 26.3W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | I-Pak |
| Paket / Fall | TO-251-3 Short Leads, IPak, TO-251AA |
Hersteller: ON Semiconductor
Beschreibung: MOSFET N-CH 30V 8.4A DPAK
Auf Lager: 2500
