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| Artikelnummer | CMF20120D |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | SiCFET (Silicon Carbide) |
| Drain auf Source-Spannung (Vdss) | 1200V |
| Strom - Dauerablass (Id) @ 25 ° C | 42A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 20V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 90.8nC @ 20V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1915pF @ 800V |
| Vgs (Max) | +25V, -5V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 215W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 110 mOhm @ 20A, 20V |
| Betriebstemperatur | -55°C ~ 135°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-247-3 |
| Paket / Fall | TO-247-3 |
