atmel corporation is an industry leader in the design and manufacture of advanced semiconductors, with focus on microcontrollers, nonvolatile memory, logic, radio frequency (rf) components and sensors.
| Artikelnummer | 2N6660 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 60V |
| Strom - Dauerablass (Id) @ 25 ° C | 410mA (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 5V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 50pF @ 24V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 6.25W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 3 Ohm @ 1A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-39 |
| Paket / Fall | TO-205AD, TO-39-3 Metal Can |
