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| Part Number | SI2314EDS-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.77A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
In Stock: 12000
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
In Stock: 0
