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| Part Number | TK55S10N1,LQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3280pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 27.5A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK+ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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