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| Artikelnummer | MJD253-1G |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | PNP |
| Aktuell - Sammler (Ic) (Max) | 4A |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 100V |
| Vce Sättigung (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Aktuell - Kollektor Cutoff (Max) | 100nA (ICBO) |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Leistung max | 1.4W |
| Frequenz - Übergang | 40MHz |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Paket / Fall | TO-251-3 Short Leads, IPak, TO-251AA |
| Lieferantengerätepaket | I-Pak |
