| Part Number | SIR892DP-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2645pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
In Stock: 3000
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
In Stock: 0