transphorm is a global semiconductor company that develops gallium nitride (gan) fets for high-voltage power conversion applications.
| Part Number | TPH3208LDG |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 400V |
| Vgs (Max) | ±18V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13A, 8V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (8x8) |
| Package / Case | 3-PowerDFN |
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