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Part Number | TK560A65Y,S4X |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 240µA |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 30W |
Rds On (Max) @ Id, Vgs | 560 mOhm @ 3.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET TRANSISTOR TO-220SIS PD
In Stock: 200
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET TRANSISTOR TO-220SIS PD
In Stock: 200
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET TRANSISTOR DPAK(OS) PD
In Stock: 4000
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET TRANSISTOR DPAK(OS) PD
In Stock: 4000