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| Part Number | TK25E60X5,S1X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 7.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A TO-220AB
In Stock: 0
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO-220AB
In Stock: 75
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO-220AB
In Stock: 95
