Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Single 2SC6026MFVGR,L3F

Toshiba Semiconductor and Storage 2SC6026MFVGR,L3F

Part Number
2SC6026MFVGR,L3F
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS NPN 50V 0.15A VESM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Single
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 40000 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.01575/pcs
  • 8,000 pcs

    0.01575/pcs
  • 16,000 pcs

    0.01339/pcs
  • 24,000 pcs

    0.01260/pcs
  • 56,000 pcs

    0.01182/pcs
  • 200,000 pcs

    0.01050/pcs
Total:0.01575/pcs Unit Price:
0.01575/pcs
Target price:
Quantity:
Product Parameter
Part Number 2SC6026MFVGR,L3F
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 150mW
Frequency - Transition 60MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
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