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| Part Number | CSD25211W1015 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 10V |
| Vgs (Max) | -6V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 1.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Package / Case | 6-UFBGA, DSBGA |
Manufacturer: Texas Instruments
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