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| Part Number | STH185N10F3-6 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 114.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6665pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 60A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-6 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 100V 120A H2PAK
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Manufacturer: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK
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Description: MOSFET N-CH 40V 120A H2PAK-2
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Manufacturer: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
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Manufacturer: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
In Stock: 0
