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| Part Number | NVB25P06T4G |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 27.5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
| Vgs (Max) | ±15V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tj) |
| Rds On (Max) @ Id, Vgs | 82 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer: ON Semiconductor
Description: MOSFET P-CH 60V 27.5A D2PAK
In Stock: 800
