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| Part Number | NTQS6463R2 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 6.8A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSSOP |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
