Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased NSVBC114YDXV6T1G

ON Semiconductor NSVBC114YDXV6T1G

Part Number
NSVBC114YDXV6T1G
Manufacturer
ON Semiconductor
Description
TRANS 2NPN PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
ON Semiconductor

ON Semiconductor

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In Stock 237409 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.05371/pcs
  • 8,000 pcs

    0.05371/pcs
Total:0.05371/pcs Unit Price:
0.05371/pcs
Target price:
Quantity:
Product Parameter
Part Number NSVBC114YDXV6T1G
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
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