Part Number | IPP065N06LGAKSA1 |
---|---|
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 157nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO-220-3
In Stock: 69
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO220-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO-220
In Stock: 0