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| Part Number | IPB80N03S4L03ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 45µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Vgs (Max) | ±16V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
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Manufacturer: Infineon Technologies
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Manufacturer: Infineon Technologies
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Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
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Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
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Manufacturer: Infineon Technologies
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Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
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Manufacturer: Infineon Technologies
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Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
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Manufacturer: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
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