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| Part Number | FDFM2N111 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 273pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.7W (Ta) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MicroFET 3x3mm |
| Package / Case | 6-MLP, Power33 |
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